The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2023
Filed:
Jun. 20, 2018
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Abhishek Sharma, Hillsboro, OR (US);
Yih Wang, Portland, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10802 (2013.01); H01L 27/10814 (2013.01); H01L 27/10817 (2013.01); H01L 27/10897 (2013.01); H01L 29/78642 (2013.01);
Abstract
Embodiments include a transistor device that comprises a gate electrode and a gate dielectric surrounding the gate electrode. In an embodiment, a source region may be below the gate electrode and a drain region may be above the gate electrode. In an embodiment, a channel region may be between the source region and the drain region. In an embodiment, the channel region is separated from a sidewall of the gate electrode by the gate dielectric. In an embodiment, a capacitor may be electrically coupled to the drain region.