The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2023
Filed:
Nov. 30, 2020
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Yu-Yang Shen, Kaohsiung, TW;
Chien-Hsien Tseng, Hsinchu, TW;
Dun-Nian Yaung, Taipei, TW;
Nai-Wen Cheng, Tainan, TW;
Pao-Tung Chen, Tainan, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 21/265 (2006.01); H01L 25/18 (2023.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 21/265 (2013.01); H01L 23/5226 (2013.01); H01L 23/53214 (2013.01); H01L 23/53228 (2013.01); H01L 25/18 (2013.01);
Abstract
Various embodiments of the present disclosure are directed towards a semiconductor structure including a first through substrate via (TSV) within a substrate. The first TSV comprises a first doped region extending from a top surface of the substrate to a bottom surface of the substrate. A conductive via overlies the top surface of the substrate and is electrically coupled to the first TSV.