The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2023
Filed:
May. 11, 2020
Applied Materials, Inc., Santa Clara, CA (US);
Wenyi Liu, Santa Clara, CA (US);
Wei Tang, Santa Clara, CA (US);
Srinivas Gandikota, Santa Clara, CA (US);
Yixiong Yang, San Jose, CA (US);
Yong Wu, Mountain View, CA (US);
Jianqiu Guo, Santa Clara, CA (US);
Arkaprava Dan, Santa Clara, CA (US);
Mandyam Sriram, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method for forming a metal nitride layer on a substrate includes exposing a substrate having features formed therein to a first deposition gas mixture including metal source material in a processing chamber to deposit metal source material in the features, supplying a first purge gas mixture into the processing chamber to remove excess metal source material and reaction byproducts from the processing chamber, exposing the substrate to a second deposition gas mixture including a nitride source compound in the processing chamber to form no more than one monolayer of metal nitride, supplying a second purge gas mixture into the processing chamber to remove excess nitride source compound and reaction byproducts from the processing chamber, and exposing the substrate to plasma using a microwave plasma source.