The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2023
Filed:
Jan. 28, 2022
Applicant:
Asml Netherlands B. V., Veldhoven, NL;
Inventors:
Raymond Wilhelmus Louis Lafarre, Helmond, NL;
Sjoerd Nicolaas Lambertus Donders, Vught, NL;
Nicolaas Ten Kate, Almkerk, NL;
Nina Vladimirovna Dziomkina, Eindhoven, NL;
Yogesh Pramod Karade, Eindhoven, NL;
Elisabeth Corinne Rodenburg, Heeze, NL;
Assignee:
ASML NETHERLANDS B.V., Veldhoven, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B22F 7/06 (2006.01); G03F 7/20 (2006.01); B23K 26/354 (2014.01); B23K 26/342 (2014.01); B22F 10/20 (2021.01); B22F 10/00 (2021.01); B23Q 3/18 (2006.01); B05D 3/06 (2006.01); B05D 5/00 (2006.01); B33Y 10/00 (2015.01); B33Y 80/00 (2015.01);
U.S. Cl.
CPC ...
B22F 7/062 (2013.01); B05D 3/06 (2013.01); B05D 5/00 (2013.01); B22F 10/00 (2021.01); B22F 10/20 (2021.01); B23K 26/342 (2015.10); B23K 26/354 (2015.10); B23Q 3/18 (2013.01); B33Y 10/00 (2014.12); B33Y 80/00 (2014.12); G03F 7/20 (2013.01); G03F 7/707 (2013.01); G03F 7/708 (2013.01); G03F 7/70341 (2013.01); G03F 7/70416 (2013.01); G03F 7/70708 (2013.01); G03F 7/70716 (2013.01); G03F 7/70733 (2013.01);
Abstract
A substrate holder for a lithographic apparatus has a main body having a thin-film stack provided on a surface thereof. The thin-film stack forms an electronic or electric component such as an electrode, a sensor, a heater, a transistor or a logic device, and has a top isolation layer. A plurality of burls to support a substrate are formed on the thin-film stack or in apertures of the thin-film stack.