The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2023
Filed:
Aug. 10, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Hyeonjin Shin, Suwon-si, KR;
Sangwon Kim, Seoul, KR;
Kyung-Eun Byun, Seongnam-si, KR;
Hyunjae Song, Hwaseong-si, KR;
Keunwook Shin, Yongin-si, KR;
Eunkyu Lee, Yongin-si, KR;
Changseok Lee, Gwacheon-si, KR;
Yeonchoo Cho, Seongnam-si, KR;
Taejin Choi, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
An interconnect structure for reducing a contact resistance, an electronic device including the same, and a method of manufacturing the interconnect structure are provided. The interconnect structure includes a semiconductor layer including a first region having a doping concentration greater than a doping concentration of a peripheral region of the semiconductor layer, a metal layer facing the semiconductor layer, a graphene layer between the semiconductor layer and the metal layer, and a conductive metal oxide layer between the graphene layer and the semiconductor and covering the first region.