The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 11, 2023

Filed:

Jun. 14, 2019
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Nazila Haratipour, Hillsboro, OR (US);

Chia-Ching Lin, Portland, OR (US);

Sou-Chi Chang, Portland, OR (US);

Ian A. Young, Portland, OR (US);

Uygar E. Avci, Portland, OR (US);

Jack T. Kavalieros, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 49/02 (2006.01); H01G 4/018 (2006.01); H01L 23/64 (2006.01);
U.S. Cl.
CPC ...
H01L 28/60 (2013.01); H01G 4/018 (2013.01); H01L 23/642 (2013.01);
Abstract

An improved trench capacitor structure is disclosed that allows for the formation of narrower capacitors. An example capacitor structure includes a first conductive layer on the sidewalls of an opening through a thickness of a dielectric layer, a capacitor dielectric layer on the first conductive layer, a second conductive layer on the capacitor dielectric layer, and a conductive fill material on the second conductive layer. The capacitor dielectric layer laterally extends above the opening and along a top surface of the dielectric layer, and the conductive fill material fills a remaining portion of the opening.


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