The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 11, 2023

Filed:

Jan. 28, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Meng-Sheng Chang, Hsinchu, TW;

Shao-Yu Chou, Hsinchu, TW;

Po-Hsiang Huang, Hsinchu, TW;

An-Jiao Fu, Hsinchu, TW;

Chih-Hao Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/525 (2006.01); H01L 23/528 (2006.01); H01L 23/535 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5256 (2013.01); H01L 21/76892 (2013.01); H01L 23/573 (2013.01);
Abstract

A method of making a semiconductor device includes operations directed toward electrically connecting a component to a first fuse, wherein the first fuse is on a first conductive level a first distance from the component; identifying a conductive element for omission between the first fuse and a second fuse; and electrically connecting the component to the second fuse, wherein the second fuse is on a second conductive level a second distance from the component, the second distance is greater than the first distance, and the electrically connecting the component to the second fuse comprises electrically connecting the component to the second fuse without forming the identified conductive element.


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