The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 04, 2023

Filed:

Dec. 28, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Yuan-Yen Lo, Taipei, TW;

Chia-Cheng Chang, Baoshan Township, TW;

Ming-Jhih Kuo, Zhubei, TW;

Chien-Yuan Chen, Taichung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/8238 (2006.01); H01L 21/285 (2006.01); H01L 21/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76895 (2013.01); H01L 21/28518 (2013.01); H01L 21/32 (2013.01); H01L 21/76805 (2013.01); H01L 21/76816 (2013.01); H01L 21/823821 (2013.01); H01L 21/823871 (2013.01);
Abstract

In a method of manufacturing a semiconductor device, initial connection patterns are prepared, initial cutting patterns for cutting the initial connection patterns are prepared, non-functional connection patterns at least from the initial connection patterns are identified, final cutting patterns are prepared from the initial cutting patterns and the non-functional connection patterns, a photo mask is prepared from the final cutting patterns, a photo resist pattern is formed over a target layer by a lithography operation using the photo mask, the target layer is patterned to form openings in the target layer by using the photo resist pattern, and connection layers are formed by filling the openings with a conductive material.


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