The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2023
Filed:
Jun. 29, 2018
Intel Corporation, Santa Clara, CA (US);
Tofizur Rahman, Portland, OR (US);
Christopher J. Wiegand, Portland, OR (US);
Justin S. Brockman, Portland, OR (US);
Daniel G. Ouellette, Portland, OR (US);
Angeline K. Smith, Hillsboro, OR (US);
Andrew Smith, Hillsboro, OR (US);
Pedro A. Quintero, Beaverton, OR (US);
Juan G. Alzate-Vinasco, Tigard, OR (US);
Oleg Golonzka, Beaverton, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A memory device includes a perpendicular magnetic tunnel junction (pMTJ) stack, between a bottom electrode and a top electrode. In an embodiment, the pMTJ includes a fixed magnet, a tunnel barrier above the fixed magnet and a free magnet structure on the tunnel barrier. The free magnet structure includes a first free magnet on the tunnel barrier and a second free magnet above the first free magnet, wherein at least a portion of the free magnet proximal to an interface with the free magnet includes a transition metal. The free magnet structure having a transition metal between the first and the second free magnets advantageously improves the switching efficiency of the MTJ, while maintaining a thermal stability of at least 50 kT.