The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 21, 2023

Filed:

Feb. 26, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Wang-Chun Huang, Hsinchu, TW;

Yu-Xuan Huang, Hsinchu, TW;

Hou-Yu Chen, Hsinchu County, TW;

Kuan-Lun Cheng, Hsin-Chu, TW;

Chih-Hao Wang, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/764 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 21/764 (2013.01); H01L 21/823437 (2013.01); H01L 21/823481 (2013.01); H01L 27/0886 (2013.01);
Abstract

A method includes, through a backside of a substrate, removing a portion of a gate structure to form a trench that isolates the gate structure in two portions. The method further includes depositing a sacrificial material within the trench and conformally along sidewalls of the trench, filling a remainder of the trench with a first dielectric material, partially removing the sacrificial material to leave an opening between the first dielectric material and the gate structure, and filling the opening with a work-function metal.


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