The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 14, 2023

Filed:

Jul. 09, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Tung-He Chou, Hsinchu, TW;

Sheng-Chau Chen, Tainan, TW;

Ming-Tung Wu, Hsinchu, TW;

Hsun-Chung Kuang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); B08B 5/02 (2006.01); H01L 21/687 (2006.01); H01L 21/67 (2006.01); B08B 3/10 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02087 (2013.01); B08B 3/10 (2013.01); B08B 5/02 (2013.01); H01L 21/67051 (2013.01); H01L 21/68764 (2013.01);
Abstract

In some embodiments, the present disclosure relates to method for trimming and cleaning an edge of a wafer. The method includes trimming an outer edge portion of the wafer with a blade along a continuously connected trim path to define a new sidewall of the wafer. The trimming produces contaminant particles on the wafer. Further, the method includes applying deionized water to the new sidewall of the wafer with water nozzles to remove the contaminant particles. The method also includes applying pressurized gas to the wafer at a first top surface area of the wafer with an air jet nozzle. The pressurized gas is directed outward from a center of the wafer to remove remaining contaminant particles. The applying of deionized water and the applying of pressurized gas are performed in a same chamber as the trimming.


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