The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2023
Filed:
May. 28, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A method for forming a semiconductor structure is provided. The method includes forming a stack over a substrate. The stack includes alternating first semiconductor layers and second semiconductor layers. The method also includes forming a polishing stop layer over the stack and a dummy layer over the polishing stop layer, recessing the dummy layer, the polishing stop layer and the stack to form a recess, forming a third semiconductor layer to fill the recess, and planarizing the dummy layer and the third semiconductor layer until the polishing stop layer is exposed. The method also includes patterning the polishing stop layer and the stack into a first fin structure and the third semiconductor layer into a second fin structure, removing the second semiconductor layers of the first fin structure to form nanostructures, and forming a gate stack across the first fin structure and the second fin structure.