The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 07, 2023

Filed:

Dec. 10, 2019
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Sai Abhinand, Singapore, SG;

Michael Sorensen, Milpitas, CA (US);

Karthik Elumalai, Karnataka, IN;

Dimantha Rajapaksa, Ragama, LK;

Cheng Sun, Singapore, SG;

James S. Papanu, San Rafael, CA (US);

Gaurav Mehta, Singapore, SG;

Eng Sheng Peh, Singapore, SG;

Sri Thirunavukarasu, Singapore, SG;

Onkara Korasiddaramaiah, Santa Clara, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01J 37/32 (2006.01); H01L 21/683 (2006.01); H01L 21/82 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01J 37/32642 (2013.01); H01J 37/32715 (2013.01); H01L 21/6833 (2013.01); H01L 21/82 (2013.01); H01J 2237/3341 (2013.01);
Abstract

Electrostatic chucks with reduced current leakage and methods of dicing semiconductor wafers are described. In an example, an etch apparatus includes a chamber, and a plasma source within or coupled to the chamber. An electrostatic chuck is within the chamber. The electrostatic chuck includes a conductive pedestal having a plurality of notches at a circumferential edge thereof. The electrostatic chuck also includes a plurality of lift pins corresponding to ones of the plurality of notches.


Find Patent Forward Citations

Abhinand, Sai. (2023). Electrostatic chuck with reduced current leakage for hybrid laser scribing and plasma etch wafer singulation process (U.S. Patent No. 11600492). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11600492

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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