The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2023
Filed:
Jan. 05, 2021
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Chih-Nan Lo, Hsinchu, TW;
Ming-Chi Huang, Hsinchu, TW;
Hsin-Hsien Lu, Hsinchu, TW;
Ming-Hsi Yeh, Hsinchu, TW;
Kuo-Bin Huang, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
The present disclosure provides a method for fabricating a semiconductor structure, including forming an inter dielectric layer over a first region and a second region of a substrate, wherein the second region is adjacent to the first region, forming a high-k material over the inter dielectric layer in the first region and the second region, forming an oxygen capturing layer over the high-k material in the first region, and applying oxidizing agent over the oxygen capturing layer.