The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2023
Filed:
Mar. 19, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chih-Ming Lee, Hsinchu, TW;
Hung-Che Liao, Hsinchu, TW;
Kun-Tsang Chuang, Hsinchu, TW;
Wei-Chung Lu, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method of making a semiconductor structure includes depositing a first passivation material between adjacent conductive elements on a substrate, wherein a bottommost surface of the first passivation material is coplanar with a bottommost surface of each of the adjacent conductive elements. The method further includes depositing a second passivation material on the substrate, wherein the second passivation material contacts a sidewall of each of the adjacent conductive elements and a sidewall of the first passivation material, a bottommost surface of the second passivation material is coplanar with the bottommost surface of each of the adjacent conductive elements, and the second passivation material is different from the first passivation material.