The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 31, 2023

Filed:

Oct. 30, 2020
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chen-En Yen, Changhua County, TW;

Ming-Da Cheng, Taoyuan, TW;

Mirng-Ji Lii, Hsinchu County, TW;

Wen-Hsiung Lu, Tainan, TW;

Cheng-Jen Lin, Kaohsiung, TW;

Chin-Wei Kang, Tainan, TW;

Chang-Jung Hsueh, Taipei, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/42 (2010.01); H01L 23/522 (2006.01); H01L 27/24 (2006.01); H01L 33/60 (2010.01); H01L 33/62 (2010.01); H01L 27/32 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 33/42 (2013.01); H01L 23/5223 (2013.01); H01L 23/5226 (2013.01); H01L 27/2463 (2013.01); H01L 33/60 (2013.01); H01L 33/62 (2013.01);
Abstract

A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a semiconductor substrate, active devices and transparent conductive patterns. The active devices are formed on the semiconductor substrate. The transparent conductive patterns are formed over the active devices and electrically connected to the active devices. The transparent conductive patterns are made of a metal oxide material. The metal oxide material has a first crystalline phase with a prefer growth plane rich in oxygen vacancy, and has a second crystalline phase with a prefer growth plane poor in oxygen vacancy.


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