The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2023
Filed:
Nov. 13, 2020
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Assignee:
GLOBALFOUNDRIES U.S. INC., Malta, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 29/78 (2006.01); H01L 21/768 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 29/51 (2006.01); H01L 23/528 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41775 (2013.01); H01L 21/76808 (2013.01); H01L 21/76816 (2013.01); H01L 21/76834 (2013.01); H01L 21/76852 (2013.01); H01L 21/76877 (2013.01); H01L 21/76885 (2013.01); H01L 23/528 (2013.01); H01L 23/5221 (2013.01); H01L 23/5283 (2013.01); H01L 29/0847 (2013.01); H01L 29/517 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a scaled gate contact and source/drain cap and methods of manufacture. The structure includes: a gate structure comprising an active region; source and drain contacts adjacent to the gate structure; a capping material over the source and drain contacts; a gate contact formed directly above the active region of the gate structure and over the capping material; a U-shape dielectric material around the gate contact, above the source and drain contacts; and a contact in direct electrical contact to the source and drain contacts.