The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2023
Filed:
Oct. 30, 2020
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Tao-Yi Hung, Hsinchu, TW;
Wun-Jie Lin, Hsinchu, TW;
Jam-Wem Lee, Hsinchu, TW;
Kuo-Ji Chen, New Taipei, TW;
Chia-En Huang, Hsinchu County, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0255 (2013.01); H01L 21/823821 (2013.01); H01L 21/823828 (2013.01); H01L 27/0924 (2013.01);
Abstract
A method for fabricating an integrated circuit is provided. The method includes etching a first recess in a semiconductor structure; forming a first doped epitaxial feature in the first recess; and forming a second doped epitaxial feature over the first doped epitaxial feature, wherein the second doped epitaxial feature has a conductive type opposite to a conductive type of the first doped epitaxial feature.