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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11569170 B1

PDFFull Text
Date of Patent:
Jan. 31, 2023

Filed:

Oct. 07, 2020

Substrate with a buried conductor under an active region for enhanced thermal conductivity and rf shielding

Applicant:

Globalfoundries U.s. Inc., Santa Clara, CA (US);

Inventors:

Siva P. Adusumilli, South Burlington, VT (US);

Mark David Levy, Williston, VT (US);

Ramsey Hazbun, Colchester, VT (US);

Alvin Joseph, Williston, VT (US);

Steven Bentley, Menands, VT (US);

Assignee:

GlobalFoundries U.S. Inc., Malta, NY (US);

Attorney:

David Cain

Primary Examiner:

Herve-Louis Y Assouman

Int. Cl.
CPC ...
H01L 23/535 (2006.01); H01L 21/74 (2006.01); H01L 21/768 (2006.01); H01L 23/367 (2006.01); H01L 23/48 (2006.01); H01L 29/10 (2006.01); H01L 21/8234 (2006.01); H01L 27/092 (2006.01); H01L 29/778 (2006.01); H01L 29/735 (2006.01);
U.S. Cl.
CPC ...
H01L 23/535 (2013.01); H01L 21/743 (2013.01); H01L 21/76805 (2013.01); H01L 21/76831 (2013.01); H01L 23/367 (2013.01); H01L 23/481 (2013.01); H01L 27/092 (2013.01); H01L 29/735 (2013.01); H01L 29/7786 (2013.01);
Abstract

A semiconductor device is provided, the semiconductor device comprising a substrate having merged cavities in the substrate. An active region is over the merged cavities in the substrate. A thermally conductive layer is in the merged cavities in the substrate, whereby the thermally conductive layer at least partially fills up the merged cavities in the substrate. A first contact pillar connects the thermally conductive layer in the merged cavities in the substrate with a metallization layer above the active region.

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