The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2023
Filed:
Jul. 26, 2021
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Shih-Chun Huang, Hsinchu, TW;
Ya-Wen Yeh, Taipei, TW;
Chien-Wen Lai, Hsinchu, TW;
Wei-Liang Lin, Hsin-Chu, TW;
Ya Hui Chang, Hsinchu, TW;
Yung-Sung Yen, New Taipei, TW;
Ru-Gun Liu, Hsinchu County, TW;
Chin-Hsiang Lin, Hsin-Chu, TW;
Yu-Tien Shen, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method of depositing a material on one of two, but not both, sidewalls of a raised structure formed on a substrate includes tilting a normal of the substrate away from a source of the deposition material or tilting the source of the deposition material away from the normal of the substrate. The method may be implemented by a plasma-enhanced chemical vapor deposition (PECVD) technique.