The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2023
Filed:
Sep. 16, 2020
Applicant:
Asm Ip Holding B.v., Almere, NL;
Inventors:
HeeSung Kang, Osan-si, KR;
YoonKi Min, Seoul, KR;
WanGyu Lim, Icheon-si, KR;
SeokJae Oh, Suwon-si, KR;
SeongIl Cho, Cheonan-si, KR;
Assignee:
ASM IP Holding B.V., Versterkerstrasse, NL;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0234 (2013.01); H01L 21/0228 (2013.01); H01L 21/02274 (2013.01); H01L 21/31111 (2013.01); H01L 21/0214 (2013.01); H01L 21/0217 (2013.01);
Abstract
A substrate processing method capable of achieving uniform etch selectivity in the entire thickness range of a thin film formed on a stepped structure includes: forming a thin film on a substrate by performing a plurality of cycles including forming at least one layer and applying plasma to the at least one layer under a first process condition; and applying plasma to the thin film under a second process condition different from the first process condition.