The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2023
Filed:
Aug. 09, 2021
Micron Technology, Inc., Boise, ID (US);
Hao T. Nguyen, San Jose, CA (US);
Tomoko Ogura Iwasaki, San Jose, CA (US);
Erwin E. Yu, San Jose, CA (US);
Dheeraj Srinivasan, San Jose, CA (US);
Sheyang Ning, San Jose, CA (US);
Lawrence Celso Miranda, San Jose, MN (US);
Aaron S. Yip, Los Gatos, CA (US);
Yoshihiko Kamata, Yokohama, JP;
Micron Technology, Inc., Boise, ID (US);
Abstract
Memory devices might include a first latch to store a first data bit; a second latch to store a second data bit; a data line selectively connected to the first latch, the second latch, and a string of series-connected memory cells; and a controller configured to bias the data line during a programing operation of a selected memory cell. The controller may with the first data bit equal to 0 and the second data bit equal to 0, bias the data line to a first voltage level; with the first data bit equal to 1 and the second data bit equal to 0, bias the data line to a second voltage level; with the first data bit equal to 0 and the second data bit equal to 1, bias the data line to a third voltage level; and with the first data bit equal to 1 and the second data bit equal to 1, bias the data line to a fourth voltage level.