The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2023
Filed:
Sep. 30, 2017
Intel Corporation, Santa Clara, CA (US);
Marko Radosavljevic, Portland, OR (US);
Sansaptak Dasgupta, Hillsboro, OR (US);
Han Wui Then, Portland, OR (US);
Ibrahim Ban, Beaverton, OR (US);
Paul B. Fischer, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A device including a III-N material is described. The device includes a transistor structure having a first layer including a first group III-nitride (III-N) material, a polarization charge inducing layer above the first layer, the polarization charge inducing layer including a second III-N material, a gate electrode above the polarization charge inducing layer and a source structure and a drain structure on opposite sides of the gate electrode. The device further includes a plurality of peripheral structures adjacent to transistor structure, where each of the peripheral structure includes the first layer, but lacks the polarization charge inducing layer, an insulating layer above the peripheral structure and the transistor structure, wherein the insulating layer includes a first dielectric material. A metallization structure, above the peripheral structure, is coupled to the transistor structure.