The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 17, 2023

Filed:

Mar. 27, 2019
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Kaan Oguz, Portland, OR (US);

Christopher Wiegand, Portland, OR (US);

Noriyuki Sato, Hillsboro, OR (US);

Angeline Smith, Hillsboro, OR (US);

Tanay Gosavi, Hillsboro, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/22 (2006.01); H01L 43/14 (2006.01); H01L 43/10 (2006.01); H01L 43/06 (2006.01); H01L 43/08 (2006.01); H01L 43/04 (2006.01);
U.S. Cl.
CPC ...
H01L 27/228 (2013.01); H01L 43/14 (2013.01); H01L 43/04 (2013.01); H01L 43/06 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01);
Abstract

A spin orbit memory device includes a material layer stack on a spin orbit electrode. The material layer stack includes a magnetic tunnel junction (MTJ) and a synthetic antiferromagnetic (SAF) structure on the MTJ. The SAF structure includes a first magnet structure and a second magnet structure separated by an antiferromagnetic coupling layer. The first magnet structure includes a first magnet and a second magnet separated by a single layer of a non-magnetic material such as platinum. The second magnet structure includes a stack of bilayers, where each bilayer includes a layer of platinum on a layer of a magnetic material such.


Find Patent Forward Citations

Loading…