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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11557546 B1

PDFFull Text
Date of Patent:
Jan. 17, 2023

Filed:

May. 21, 2021

Semiconductor structure

Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Chen-Hua Yu, Hsinchu, TW;

Kuo-Chung Yee, Taoyuan County, TW;

Jui-Pin Hung, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;

Attorneys:

WPAT

Anthony King

Primary Examiner:

Tuan A Hoang

Int. Cl.
CPC ...
H01L 23/552 (2006.01); H01L 23/31 (2006.01); H01L 21/56 (2006.01); H01L 21/3105 (2006.01); H01L 21/768 (2006.01); H01L 23/538 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/552 (2013.01); H01L 21/31053 (2013.01); H01L 21/565 (2013.01); H01L 21/568 (2013.01); H01L 21/768 (2013.01); H01L 23/3107 (2013.01); H01L 23/5389 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 24/96 (2013.01); H01L 24/97 (2013.01); H01L 2224/04105 (2013.01);
Abstract

A semiconductor structure includes a molding, a device in the molding, and a RDL over the device and the molding. The RDL includes a first portion directly over a surface of the molding, and a second portion directly over a surface of the device. A bottom surface of the first portion is in contact with the surface of the molding, and a bottom surface of the second portion is in contact with the surface of the device. The bottom surface of the first portion of the RDL and the bottom surface of the second portion of the RDL are at different levels and misaligned from each other. A thickness of the first portion is greater than a thickness of the second portion.

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Yu, Chen-Hua. (2023). Semiconductor structure (U.S. Patent No. 11557546). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11557546

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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