The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 10, 2023

Filed:

Sep. 19, 2019
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Hongbin Zhu, Wuhan, CN;

Juan Tang, Wuhan, CN;

Zi Qun Hua, Wuhan, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 27/1157 (2017.01); H01L 27/11582 (2017.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 27/1157 (2013.01); H01L 27/11582 (2013.01);
Abstract

Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a memory stack including interleaved conductive layers and dielectric layers above the substrate, a structure extending vertically through the memory stack, a first dielectric layer on the memory stack, an etch stop layer on the first dielectric layer, a second dielectric layer on the etch stop layer, a first contact through the etch stop layer and the first dielectric layer and in contact with an upper end of the structure, and a second contact through the second dielectric layer and in contact with at least an upper end of the first contact.


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