The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2023
Filed:
Jun. 20, 2019
Advanced Semiconductor Engineering, Inc., Kaohsiung, TW;
Cheng-Yuan Kung, Kaohsiung, TW;
Chien-Hua Chen, Kaohsiung, TW;
Teck-Chong Lee, Kaohsiung, TW;
Hung-Yi Lin, Kaohsiung, TW;
Pao-Nan Lee, Kaohsiung, TW;
Hsin Hsiang Wang, Kaohsiung, TW;
Min-Tzu Hsu, Kaohsiung, TW;
Po-Hao Chen, Kaohsiung, TW;
ADVANCED SEMICONDUCTOR ENGINEERING, INC., Kaohsiung, TW;
Abstract
A capacitor bank structure includes a plurality of capacitors, a protection material, a first dielectric layer and a plurality of first pillars. The capacitors are disposed side by side. Each of the capacitors has a first surface and a second surface opposite to the first surface, and includes a plurality of first electrodes and a plurality of second electrodes. The first electrodes are disposed adjacent to the first surface for external connection, and the second electrodes are disposed adjacent to the second surface for external connection. The protection material covers the capacitors, sidewalls of the first electrodes and sidewalls of the second electrodes, and has a first surface corresponding to the first surface of the capacitor and a second surface corresponding to the second surface of the capacitor. The first dielectric layer is disposed on the first surface of the protection material, and defines a plurality of openings to expose the first electrodes. The first pillars are disposed in the openings of the first dielectric layer and protrude from the first dielectric layer.