The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2023
Filed:
Jun. 03, 2020
Samsung Electronics Co., Ltd., Suwon-si, KR;
Yonghee Kim, Yongin-si, KR;
Byunghun Han, Suwon-si, KR;
Hyeongmo Kang, Hwaseong-si, KR;
Donghyeon Na, Hwaseong-si, KR;
Dougyong Sung, Seoul, KR;
Seungbo Shim, Seoul, KR;
Minjae Lee, Hwaseong-si, KR;
Myungsun Choi, Hwaseong-si, KR;
Minyoung Hur, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A plasma etching method and a semiconductor device fabrication method, the plasma etching method including providing a source power having a first single pulse to an electrostatic chuck in order to generate a plasma on a substrate; providing a first bias power having a burst pulse different from the first single pulse to concentrate the plasma on the substrate; and providing a second bias power having a second single pulse the same as the first single pulse to accelerate the plasma toward the substrate.