The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2023
Filed:
Feb. 11, 2021
Applicant:
Asm Ip Holding B.v., Almere, NL;
Inventors:
Viljami Pore, Helsinki, FI;
Timo Hatanpää, Espoo, FI;
Mikko Ritala, Espoo, FI;
Markku Leskelä, Espoo, FI;
Assignee:
ASM IP HOLDING B.V., Almere, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); C23C 16/455 (2006.01); C23C 16/30 (2006.01); H01L 21/02 (2006.01); H01L 45/00 (2006.01); C23C 16/18 (2006.01); C23C 16/44 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45553 (2013.01); C23C 16/18 (2013.01); C23C 16/305 (2013.01); C23C 16/4408 (2013.01); C23C 16/45555 (2013.01); H01L 21/0262 (2013.01); H01L 21/02538 (2013.01); H01L 21/02543 (2013.01); H01L 21/02546 (2013.01); H01L 21/02549 (2013.01); H01L 45/06 (2013.01); H01L 45/144 (2013.01); H01L 45/148 (2013.01); H01L 45/1616 (2013.01); H01L 21/02521 (2013.01); H01L 21/02551 (2013.01);
Abstract
Atomic layer deposition (ALD) processes for forming Group VA element containing thin films, such as Sb, Sb—Te, Ge—Sb and Ge—Sb—Te thin films are provided, along with related compositions and structures. Sb precursors of the formula Sb(SiRRR)are preferably used, wherein R, R, and Rare alkyl groups. As, Bi and P precursors are also described. Methods are also provided for synthesizing these Sb precursors. Methods are also provided for using the Sb thin films in phase change memory devices.