The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2022
Filed:
Mar. 27, 2019
Intel Corporation, Santa Clara, CA (US);
Willy Rachmady, Beaverton, OR (US);
Cheng-Ying Huang, Hillsboro, OR (US);
Gilbert Dewey, Hillsboro, OR (US);
Jack Kavalieros, Portland, OR (US);
Caleb Barrett, Hillsboro, OR (US);
Jay P. Gupta, Hillsboro, OR (US);
Nishant Gupta, Hillsboro, OR (US);
Kaiwen Hsu, Santa Clara, CA (US);
Byungki Jung, Portland, OR (US);
Aravind S. Killampalli, Beaverton, OR (US);
Justin Railsback, Santa Clara, CA (US);
Supanee Sukrittanon, North Plains, OR (US);
Prashant Wadhwa, Santa Clara, CA (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Transistor structures including a non-planar body that has an active portion comprising a semiconductor material of a first height that is variable, and an inactive portion comprising an oxide of the semiconductor material of a second variable height, complementary to the first height. Gate electrodes and source/drain terminals may be coupled through a transistor channel having any width that varies according to the first height. Oxidation of a semiconductor material may be selectively catalyzed to convert a desired portion of a non-planar body into the oxide of the semiconductor material. Oxidation may be enhanced through the application of a catalyst, such as one comprising metal and oxygen, for example.