The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 20, 2022

Filed:

Jun. 25, 2020
Applicant:

Kla Corporation, Milpitas, CA (US);

Inventors:

Roie Volkovich, Hadera, IL;

Liran Yerushalmi, Zicron Yaacob, IL;

Raviv Yohanan, Qiryat Motzkin, IL;

Mark Ghinovker, Yoqneam Ilit, IL;

Assignee:

KLA CORPORATION, Milpitas, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/544 (2006.01); G01B 21/22 (2006.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
H01L 23/544 (2013.01); G01B 21/22 (2013.01); G03F 7/70633 (2013.01); H01L 2223/54426 (2013.01);
Abstract

A target and method for using the same in the measurement of misregistration between at least a first layer and a second layer formed on a wafer in the manufacture of functional semiconductor devices on the wafer, the functional semiconductor devices including functional device structures (FDSTs), the target including a plurality of measurement structures (MSTs), the plurality of MSTs being part of the first layer and the second layer and a plurality of device-like structures (DLSTs), the plurality of DLSTs being part of at least one of the first layer and the second layer, the DLSTs sharing at least one characteristic with the FDSTs and the MSTs not sharing the at least one characteristic with the FDSTs.


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