The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 20, 2022

Filed:

Dec. 14, 2020
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yung-Hsu Wu, Taipei, TW;

Hai-Ching Chen, Hsinchu, TW;

Jung-Hsun Tsai, Taoyuan, TW;

Shau-Lin Shue, Hsinchu, TW;

Tien-I Bao, Dayuan Township, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 21/033 (2006.01); H01L 21/311 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); H01L 21/0214 (2013.01); H01L 21/0228 (2013.01); H01L 21/02126 (2013.01); H01L 21/02282 (2013.01); H01L 21/02348 (2013.01); H01L 21/0337 (2013.01); H01L 21/31144 (2013.01); H01L 21/76802 (2013.01); H01L 21/76807 (2013.01); H01L 21/76877 (2013.01); H01L 21/76885 (2013.01); H01L 23/5226 (2013.01); H01L 23/532 (2013.01);
Abstract

A first layer is located over a substrate. The first layer includes a first dielectric component and a first conductive component. A first etching stop layer is located over the first dielectric component. A metal capping layer is located over the first conductive component. A second etching stop layer is located over the first etching stop layer and over the metal capping layer. A second layer is located over the second etching stop layer. The second layer includes a second dielectric component and a second conductive component. A third conductive component electrically interconnects the second conductive component to the first conductive component.


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