The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2022
Filed:
Aug. 22, 2019
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 21/76816 (2013.01); H01L 21/76831 (2013.01); H01L 21/76843 (2013.01); H01L 21/76897 (2013.01); H01L 23/5283 (2013.01); H01L 23/53266 (2013.01);
Abstract
Interconnect structures and methods of forming the same are provided. An interconnect structure according to the present disclosure includes a first conductive feature in a first dielectric layer, a second conductive feature aligned with and over the first conductive feature, a first insulation layer over the first dielectric layer and the second conductive feature, a second dielectric layer over the first insulating layer, and a contact via through the first insulation layer and the second dielectric layer.