The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 20, 2022

Filed:

Jun. 28, 2018
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chih-Hung Yeh, Tainan, TW;

Tsung-Lin Lee, Tainan, TW;

Yi-Ming Lin, Tainan, TW;

Sheng-Chun Yang, Tainan, TW;

Tung-Ching Tseng, Taipei, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32449 (2013.01); H01J 37/32862 (2013.01); C23C 16/4405 (2013.01); C23C 16/4408 (2013.01); C23C 16/45565 (2013.01); C23C 16/45578 (2013.01); C23C 16/45587 (2013.01);
Abstract

A chemical vapor deposition (CVD) apparatus is provided. The CVD apparatus includes a CVD chamber including multiple wall portions. A pedestal is disposed inside the CVD chamber, configured to support a substrate. A gas inlet port is disposed on one of the wall portions and below a substrate support portion of the pedestal. In addition, a gas flow guiding member is disposed inside the CVD chamber, coupled to the gas inlet port, and configured to dispense cleaning gases from the gas inlet port into the CVD chamber.


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