The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2022
Filed:
Mar. 07, 2019
Intel Corporation, Santa Clara, CA (US);
Chia-Ching Lin, Portland, OR (US);
Sou-Chi Chang, Portland, OR (US);
Nazila Haratipour, Hillsboro, OR (US);
Seung Hoon Sung, Portland, OR (US);
Ashish Verma Penumatcha, Hillsboro, OR (US);
Jack Kavalieros, Portland, OR (US);
Uygar E. Avci, Portland, OR (US);
Ian A. Young, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Described is an ultra-dense ferroelectric memory. The memory is fabricated using a patterning method by that applies atomic layer deposition with selective dry and/or wet etch to increase memory density at a given via opening. A ferroelectric capacitor in one example comprises: a first structure (e.g., first electrode) comprising metal; a second structure (e.g., a second electrode) comprising metal; and a third structure comprising ferroelectric material, wherein the third structure is between and adjacent to the first and second structures, wherein a portion of the third structure is interdigitated with the first and second structures to increase surface area of the third structure. The increased surface area allows for higher memory density.