The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 13, 2022

Filed:

Jan. 25, 2021
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Wan-Yi Kao, Baoshan Township, TW;

Yu-Cheng Shiau, Hsinchu, TW;

Chunyao Wang, Zhubei, TW;

Chih-Tang Peng, Zhubei, TW;

Yung-Cheng Lu, Hsinchu, TW;

Chi On Chui, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 21/02 (2006.01); H01L 29/51 (2006.01); H01L 27/092 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 21/0214 (2013.01); H01L 21/02211 (2013.01); H01L 21/02263 (2013.01); H01L 21/76232 (2013.01); H01L 21/823481 (2013.01); H01L 27/0924 (2013.01); H01L 29/517 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/66818 (2013.01);
Abstract

A semiconductor device and method of manufacture are provided. In embodiments a first liner is deposited to line a recess between a first semiconductor fin and a second semiconductor fin, the first liner comprising a first material. The first liner is annealed to transform the first material to a second material. A second liner is deposited to line the recess, the second liner comprising a third material. The second liner is annealed to transform the third material to a fourth material.


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