The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2022
Filed:
Jul. 18, 2020
International Business Machines Corporation, Armonk, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Julien Frougier, Albany, NY (US);
Ekmini Anuja De Silva, Slingerlands, NY (US);
Eric Miller, Watervliet, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Contact designs for semiconductor FET devices are provided. In one aspect, a contact structure includes: a metal line(s); a first ILD surrounding the metal line(s), wherein a top surface of the first ILD is recessed below a top surface of the metal line(s); a liner disposed on the first ILD and on portions of the metal line(s); a top contact(s) disposed over, and in direct contact with, the metal line(s), wherein an upper portion of the top contact(s) has a width Wand a height H, wherein a lower portion of the top contact(s) has a width Wand a height H, and wherein W<Wand H>H; and a second ILD disposed over the liner and surrounding the top contact(s). A semiconductor FET device and methods for fabrication thereof are also provided.