The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 06, 2022

Filed:

Mar. 11, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Seung-Yoon Song, Seoul, KR;

Chan-Hoon Park, Osan-si, KR;

Jong-Woo Sun, Hwaseong-si, KR;

Jung-Mo Sung, Seoul, KR;

Je-Woo Han, Hwaseong-si, KR;

Jin-Young Park, Anyang-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); H01J 37/32 (2006.01); H01L 21/762 (2006.01); H01L 21/308 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67069 (2013.01); H01J 37/3211 (2013.01); H01J 37/32568 (2013.01); H01L 21/67253 (2013.01); H01J 2237/3343 (2013.01); H01L 21/3065 (2013.01); H01L 21/3083 (2013.01); H01L 21/76224 (2013.01);
Abstract

In a plasma processing method, a substrate is loaded onto a lower electrode within a chamber. A plasma power is applied to form plasma within the chamber. A voltage function of a nonsinusoidal wave having a DC pulse portion and a ramp portion is generated. Generating the voltage function may include setting a slope of the ramp portion and setting a duration ratio of the ramp portion to a cycle of the voltage function in order to control an ion energy distribution generated at a surface of the substrate. A bias power of the nonsinusoidal wave is applied to the lower electrode.


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