The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2022
Filed:
May. 21, 2020
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Shu-Hao Kuo, Tainan, TW;
Jung-Hao Chang, Taichung, TW;
Chao-Hsien Huang, Tainan, TW;
Li-Te Lin, Hsinchu, TW;
Kuo-Cheng Ching, Hsinchu County, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/306 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 27/12 (2006.01); H01L 21/84 (2006.01); H01L 21/3065 (2006.01); H01L 29/06 (2006.01); H01L 21/762 (2006.01); H01L 21/311 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7853 (2013.01); H01L 21/3065 (2013.01); H01L 21/30604 (2013.01); H01L 21/31116 (2013.01); H01L 21/76229 (2013.01); H01L 21/823821 (2013.01); H01L 21/845 (2013.01); H01L 27/0924 (2013.01); H01L 27/1211 (2013.01); H01L 29/0649 (2013.01); H01L 29/41791 (2013.01); H01L 29/66795 (2013.01); H01L 29/66803 (2013.01); H01L 21/0262 (2013.01); H01L 21/02532 (2013.01); H01L 2029/7858 (2013.01);
Abstract
A device includes a semiconductor substrate, a first fin arranged over the semiconductor substrate, and an isolation structure. The first fin includes an upper portion, a bottom portion, and an insulator layer between the upper portion and the bottom portion. A top surface of the insulator layer is wider than a bottom surface of the upper portion of the first fin. The isolation structure surrounds the bottom portion of the first fin.