The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 29, 2022

Filed:

Oct. 30, 2020
Applicant:

Fei Company, Hillsboro, OR (US);

Inventors:

Roger Alvis, Beaverton, OR (US);

John Fretwell, Hillsboro, OR (US);

Laurens Kwakman, Saint Ismier, FR;

Tomas Vystavel, Brno, CZ;

Assignee:

FEI Company, Hillsboro, OR (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 21/95 (2006.01); G01N 21/88 (2006.01); G06T 7/00 (2017.01);
U.S. Cl.
CPC ...
G01N 21/9501 (2013.01); G01N 21/8851 (2013.01); G06T 7/0004 (2013.01); G06T 2207/30148 (2013.01);
Abstract

Methods for locating and characterizing defects can include performing a first scan of a substrate to produce a first defect map including a first set of coordinates of one or more defects of the substrate and performing a second scan of one or more regions of the substrate associated with the defects based on the first defect map to produce one or more electron channeling contrast (ECC) images of the defects. Characterization of the defects can be based on the ECC images alone or in combination with other techniques. Such methods can include determining a second set of coordinates associated with the one or more defects based on the ECC images and directing an ion beam toward the substrate and milling the substrate based on the second set of coordinates.


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