The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 29, 2022

Filed:

Dec. 16, 2019
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Joseph C. Olson, Beverly, MA (US);

Ludovic Godet, Sunnyvale, CA (US);

Rutger Meyer Timmerman Thijssen, San Jose, CA (US);

Morgan Evans, Manchester, MA (US);

Jinxin Fu, Fremont, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01); C23C 14/22 (2006.01); G02B 5/18 (2006.01); G03F 7/00 (2006.01); G03F 7/16 (2006.01); F21V 8/00 (2006.01);
U.S. Cl.
CPC ...
C23C 14/221 (2013.01); G02B 5/1857 (2013.01); G03F 7/001 (2013.01); G03F 7/16 (2013.01); G03F 7/2002 (2013.01); G02B 6/0016 (2013.01); G02B 6/0065 (2013.01);
Abstract

Embodiments of the disclosure generally relate to methods of forming gratings. The method includes depositing a resist material on a grating material disposed over a substrate, patterning the resist material into a resist layer, projecting a first ion beam to the first device area to form a first plurality of gratings, and projecting a second ion beam to the second device area to form a second plurality of gratings. Using a patterned resist layer allows for projecting an ion beam over a large area, which is often easier than focusing the ion beam in a specific area.


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