The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2022
Filed:
Dec. 21, 2020
International Business Machines Corporation, Armonk, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Jingyun Zhang, Albany, NY (US);
Xin Miao, Slingerlands, NY (US);
Alexander Reznicek, Troy, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of manufacturing a nanosheet field effect transistor (FET) device is provided. The method includes forming a plurality of nanosheet stacks on a substrate, the nanosheet stacks including alternating layers of first type sacrificial layers and active semiconductor layers. The method includes forming the first type sacrificial layer on sidewalls of the nanosheet stacks, then forming a dielectric pillar between the sidewall portions of the first type sacrificial layers of adjacent nanosheet stacks, and then removing the first type sacrificial layer. The method also includes forming a PWFM layer in spaces formed by the removal of the first type sacrificial layer for a first one of the nanosheet stacks, and includes forming a NWFM layer in spaces formed by the removal of the first type sacrificial layer for an adjacent second one of the nanosheet stacks.