The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2022

Filed:

Dec. 31, 2019
Applicants:

L'air Liquide, Société Anonyme Pour L'etude ET L'exploitation Des Procédés Georges Claude, Paris, FR;

American Air Liquide, Inc., Fremont, CA (US);

Inventors:

Yumin Liu, San Jose, CA (US);

Jean-Marc Girard, Versailles, FR;

Peng Zhang, Montvale, NJ (US);

Fan Qin, Bear, DE (US);

Gennadiy Itov, Flemington, NJ (US);

Fabrizio Marchegiani, Wilmington, DE (US);

Thomas J. Larrabee, Middletown, DE (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C08G 77/12 (2006.01); B05D 1/00 (2006.01); B05D 3/02 (2006.01); C08G 77/26 (2006.01); C08G 77/08 (2006.01);
U.S. Cl.
CPC ...
C08G 77/12 (2013.01); B05D 1/005 (2013.01); B05D 3/0209 (2013.01); B05D 3/0263 (2013.01); C08G 77/08 (2013.01); C08G 77/26 (2013.01); B05D 2518/12 (2013.01);
Abstract

Disclosed are silicon and carbon containing film forming compositions comprising a polycarbosilazane polymer or oligomer formulation that consists of silazane-bridged carbosilane monomers, the carbosilane containing at least two —SiH— moieties, either as terminal groups (—SiHR) or embedded in a carbosilane cyclic compound, wherein R is H, a C-Clinear, branched, or cyclic alkyl- group, a C-Clinear, branched, or cyclic alkenyl- group, or combination thereof. Also disclosed are methods of forming a silicon and carbon containing film comprising forming a solution comprising a polycarbosilazane polymer or oligomer formulation and contacting the solution with the substrate via a spin-on coating, spray coating, dip coating, or slit coating technique to form the silicon and carbon containing film.


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