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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11495630 B1

PDFFull Text
Date of Patent:
Nov. 08, 2022

Filed:

Jul. 09, 2020

Multiple deep trench isolation (mdti) structure for cmos image sensor

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Wei Chuang Wu, Tainan, TW;

Ching-Chun Wang, Tainan, TW;

Dun-Nian Yaung, Taipei, TW;

Feng-Chi Hung, Chu-Bei, TW;

Jen-Cheng Liu, Hsin-Chu, TW;

Yen-Ting Chiang, Tainan, TW;

Chun-Yuan Chen, Tainan, TW;

Shen-Hui Hong, Tainan, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Attorney:

Eschweiler & Potashnik, LLC

Primary Examiner:

Fazli Erdem

Int. Cl.
CPC ...
H01L 27/146 (2006.01); H04N 5/374 (2011.01); H04N 5/369 (2011.01);
U.S. Cl.
CPC ...
H01L 27/1463 (2013.01); H01L 27/1464 (2013.01); H01L 27/14605 (2013.01); H01L 27/14607 (2013.01); H01L 27/14612 (2013.01); H01L 27/14621 (2013.01); H01L 27/14645 (2013.01); H01L 27/14685 (2013.01); H01L 27/14689 (2013.01); H04N 5/3696 (2013.01); H04N 5/374 (2013.01); H01L 27/14627 (2013.01); H01L 27/14632 (2013.01); H01L 27/14636 (2013.01); H01L 27/14641 (2013.01); H01L 27/14687 (2013.01);
Abstract

The present disclosure relates to a CMOS image sensor having a multiple deep trench isolation (MDTI) structure, and an associated method of formation. In some embodiments, the image sensor comprises a plurality of pixel regions disposed within a substrate and respectively comprising a photodiode configured to receive radiation that enters the substrate from a back-side. A boundary deep trench isolation (BDTI) structure is disposed at boundary regions of the pixel regions surrounding the photodiode. The BDTI structure extends from the back-side of the substrate to a first depth within the substrate. A multiple deep trench isolation (MDTI) structure is disposed at inner regions of the pixel regions overlying the photodiode. The MDTI structure extends from the back-side of the substrate to a second depth within the substrate smaller than the first depth. The MDTI structure is a continuous integral unit having a ring shape.

Find Patent Forward Citations

Wu, Wei. (2022). Multiple deep trench isolation (mdti) structure for cmos image sensor (U.S. Patent No. 11495630). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11495630

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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