The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 08, 2022

Filed:

Mar. 30, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Shih-Hao Tseng, Hsinchu, TW;

Hung-Jui Kuo, Hsinchu, TW;

Ming-Che Ho, Tainan, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 5/06 (2006.01); H01L 27/108 (2006.01); H01L 21/02 (2006.01); H01L 21/56 (2006.01); H01L 21/762 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3114 (2013.01); H01L 21/56 (2013.01); H01L 23/49827 (2013.01); H01L 24/17 (2013.01); H01L 24/32 (2013.01); H01L 2224/0237 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/28105 (2013.01);
Abstract

A semiconductor package includes a first integrated circuit structure, a first encapsulation material laterally encapsulating the first integrated circuit structure, a first redistribution structure, a solder layer, a second integrated circuit structure, a second encapsulation material second laterally encapsulating the second integrated circuit structure and a second redistribution structure. The first integrated circuit structure includes a first metallization layer. The first redistribution structure is disposed over the first integrated circuit structure and first encapsulation material. The first metallization layer faces away from the first redistribution structure and thermally coupled to the first redistribution structure. The solder layer is dispose over the first redistribution structure. The second integrated circuit structure is disposed on the first redistribution structure and includes a second metallization layer in contact with the solder layer. The second redistribution structure is disposed over the second integrated circuit structure and the second encapsulation material.


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