The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2022
Filed:
Dec. 08, 2020
Semes Co., Ltd., Cheonan-si, KR;
Jung Suk Goh, Hwaseong-si, KR;
Jae Seong Lee, Hwaseong-si, KR;
Do Youn Lim, Hwaseong-si, KR;
Kuk Saeng Kim, Goyang-si, KR;
Young Dae Chung, Incheon, KR;
Tae Shin Kim, Suwon-si, KR;
Jee Young Lee, Incheon, KR;
Won Geun Kim, Goyang-si, KR;
Ji Hoon Jeong, Hwaseong-si, KR;
Kwang Sup Kim, Asan-si, KR;
Pil Kyun Heo, Hwaseong-si, KR;
Yoon Ki Sa, Seoul, KR;
Ye Rim Yeon, Hwaseong-si, KR;
Hyun Yoon, Hwaseong-si, KR;
Do Yeon Kim, Yongin-si, KR;
Yong Jun Seo, Hwaseong-si, KR;
Byeong Geun Kim, Incheon, KR;
Young Je Um, Busan, KR;
SEMES CO., LTD., Cheonan-si, KR;
Abstract
Method and apparatus for etching a thin layer including silicon nitride formed on a substrate are disclosed. Etchant including phosphoric acid and water is supplied on the substrate so that a liquid layer is formed on the substrate. The thin layer is etched by reaction between the thin layer and the etchant. Thickness of the liquid layer is measured to detect variation in the thickness of the liquid layer while etching the thin layer. Variation in the concentration of the phosphoric acid and the water is calculated based on the variation in the thickness of the liquid layer. Water is supplied on the substrate based on the variation in the concentration of the phosphoric acid and the water so that the concentration of the phosphoric acid and the water becomes a predetermined value.