The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 08, 2022

Filed:

Sep. 28, 2020
Applicant:

Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);

Inventors:

Kevin Anglin, Somerville, MA (US);

William Davis Lee, Newburyport, MA (US);

Peter Kurunczi, Cambridge, MA (US);

Ryan Downey, Gloucester, MA (US);

Jay T. Scheuer, Rowley, MA (US);

Alexandre Likhanskii, Malden, MA (US);

William M. Holber, Gloucester, MA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/317 (2006.01); H01J 37/32 (2006.01); C02F 1/32 (2006.01); H01J 37/24 (2006.01); H01J 37/34 (2006.01); B08B 7/00 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3171 (2013.01); C02F 1/325 (2013.01); H01J 37/241 (2013.01); H01J 37/32862 (2013.01); H01J 37/3467 (2013.01); B08B 7/0035 (2013.01); H01J 2237/022 (2013.01); H01J 2237/049 (2013.01); H01J 2237/04756 (2013.01); H01J 2237/057 (2013.01); H01J 2237/334 (2013.01); H01J 2237/335 (2013.01);
Abstract

Provided herein are approaches for in-situ plasma cleaning of ion beam optics. In one approach, a system includes a component (e.g., a beam-line component) of an ion implanter processing chamber. The system further includes a power supply for supplying a first voltage and first current to the component during a processing mode and a second voltage and second current to the component during a cleaning mode. The second voltage and current are applied to one or more conductive beam optics of the component, individually, to selectively generate plasma around one or more of the one or more conductive beam optics. The system may further include a flow controller for adjusting an injection rate of an etchant gas supplied to the beam-line component, and a vacuum pump for adjusting pressure of an environment of the beam-line component.


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