The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2022
Filed:
Jun. 03, 2021
United Microelectronics Corp., Hsin-Chu, TW;
Kuan-Ying Lai, Chiayi, TW;
Hsin-Yu Hsieh, Tainan, TW;
Chang-Mao Wang, Tainan, TW;
Chung-Yi Chiu, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method of forming a semiconductor device is disclosed. A substrate having a first device region and a second device region is provided. A metal nitride barrier layer is formed to cover the first device region and the second device region. A titanium layer is deposited on the metal nitride barrier layer. The titanium layer is selectively removed from the second device region, thereby exposing the metal nitride barrier layer in the second device region. The titanium layer in the first device region is transformed into a titanium nitride layer. The titanium nitride layer is a work function layer on the first device region.