The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2022
Filed:
Jan. 20, 2021
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Chia-Ying Lee, New Taipei, TW;
Jyu-Horng Shieh, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/768 (2006.01); H01L 21/033 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); H01L 21/027 (2013.01); H01L 21/0337 (2013.01); H01L 21/76816 (2013.01); H01L 21/76832 (2013.01); H01L 21/76883 (2013.01);
Abstract
The present disclosure, in some embodiments, relates to a method of forming an integrated circuit. The method includes forming a hard mask over a dielectric layer of a substrate. A blocking layer is formed on the hard mask and spacers are formed over the blocking layer. The spacers laterally straddle opposing edges of the blocking layer. The hard mask is etched according to the spacers and the blocking layer. The dielectric layer is etched according to the hard mask.