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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11476157 B1

PDFFull Text
Date of Patent:
Oct. 18, 2022

Filed:

Jan. 07, 2021

Method of manufacturing a metal-oxide-semiconductor field-effect transistor (mosfet) having low off-state capacitance due to reduction of off-state capacitance of back-end-of-line (beol) features of the mosfet

Applicant:

Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;

Inventors:

Gulbagh Singh, Tainan, TW;

Tsung-Han Tsai, Miaoli, TW;

Shih-Lu Hsu, Tainan, TW;

Kun-Tsang Chuang, Miaoli, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Attorney:

Harrity & Harrity, LLP

Primary Examiner:

Shahed Ahmed

Assistant Examiner:

Vicki B Booker

Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/535 (2006.01); H01L 23/532 (2006.01); H01L 29/78 (2006.01); H01L 21/285 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 21/7682 (2013.01); H01L 21/28518 (2013.01); H01L 21/76805 (2013.01); H01L 21/76895 (2013.01); H01L 23/535 (2013.01); H01L 23/5329 (2013.01); H01L 29/45 (2013.01); H01L 29/78 (2013.01);
Abstract

A semiconductor device may include a source on a first side of a gate. The semiconductor device may include a drain on a second side of the gate, where the second side of the gate is opposite to the first side of the gate. The semiconductor device may include a first contact over the source. The semiconductor device may include a second contact over the drain. The semiconductor device may include an air gap over the gate between at least the first contact and the second contact. The semiconductor device may include at least two dielectric materials in each of a region between the air gap and the first contact and a region between the air gap and the second contact.

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